A cross-institutional research team has published a data-analytics-id=”inline-link” href=”https://go.redirectingat.com/?id=92X1584492&xcust=tomshardware_us_7253891563940383723&xs=1&url=https%3A%2F%2Fwww.nature.com%2Farticles%2Fs41928-025-01434-x&sref=https%3A%2F%2Fwww.tomshardware.com%2Fpc-components%2Fram%2Fnext-gen-mram-breakthrough-using-a-tungsten-layer-can-flip-bits-at-sram-rivalling-speeds-with-very-low-power-researchers-claim-true-next-gen-breakthrough” target=”_blank” data-url=”https://www.nature.com/articles/s41928-025-01434-x” referrerpolicy=”no-referrer-when-downgrade” rel=”sponsored noopener” data-hl-processed=”skimlinks” data-placeholder-url=”https://go.redirectingat.com/?id=92X1584492&xcust=hawk-custom-tracking&xs=1&url=https%3A%2F%2Fwww.nature.com%2Farticles%2Fs41928-025-01434-x&sref=https%3A%2F%2Fwww.tomshardware.com%2Fpc-components%2Fram%2Fnext-gen-mram-breakthrough-using-a-tungsten-layer-can-flip-bits-at-sram-rivalling-speeds-with-very-low-power-researchers-claim-true-next-gen-breakthrough” data-google-interstitial=”false” data-merchant-name=”nature.com” data-merchant-network=”SkimLinks”>paper where a breakthrough in (MRAM) development is detailed. According to a data-analytics-id=”inline-link” href=”https://www.nycu.edu.tw/nycu/en/app/news/view?module=headnews&id=552&serno=bb88011f-b5dd-4b11-b58f-ea24fcde0f26″ target=”_blank” data-url=”https://www.nycu.edu.tw/nycu/en/app/news/view?module=headnews&id=552&serno=bb88011f-b5dd-4b11-b58f-ea24fcde0f26″ referrerpolicy=”no-referrer-when-downgrade” data-hl-processed=”none”>blog post published by Taiwan’s National Yang Ming Chiao Tung University (NYCU), which spearheaded the efforts, they have managed to overcome a major challenge that hampered the development and adoption of this kind of non-volatile memory. The researchers claim that their spin–orbit torque magnetic random-access memory (SOT-MRAM) is a true next-gen breakthrough as it…
