Although the performance of data-analytics-id=”inline-link” href=”https://www.tomshardware.com/tech-industry/semiconductors/hbm-roadmaps-for-micron-samsung-and-sk-hynix-to-hbm4-and-beyond” data-mrf-recirculation=”inline-link” data-before-rewrite-localise=”https://www.tomshardware.com/tech-industry/semiconductors/hbm-roadmaps-for-micron-samsung-and-sk-hynix-to-hbm4-and-beyond”>high-bandwidth memory (HBM) has increased by an order of magnitude since its inception around a decade ago, many elements have remained fundamentally unchanged between HBM1 and HBM3E. But as the demands for bandwidth-hungry applications evolve, the technology must also change to accommodate them.
In new information revealed at TSMC’s European OIP forum in late November, HBM4 and HBM4E will offer four major changes. HBM4 will receive a 2,048-bit interface and base dies…
