2D transistors based on 2D materials have been demonstrated in academia and research labs for more than a decade, but none of these demonstrations were compatible with high-volume semiconductor manufacturing, as they relied on small wafers, custom research tools, and fragile process steps. But this week, Intel Foundry and imec data-analytics-id=”inline-link” href=”https://community.intel.com/t5/Blogs/Intel-Foundry/Systems-Foundry-for-the-AI-Era/How-Collaboration-in-High-NA-EUV-and-Transistor-R-D-Are-Shaping/post/1730050″ data-url=”https://community.intel.com/t5/Blogs/Intel-Foundry/Systems-Foundry-for-the-AI-Era/How-Collaboration-in-High-NA-EUV-and-Transistor-R-D-Are-Shaping/post/1730050″ target=”_blank” referrerpolicy=”no-referrer-when-downgrade” data-hl-processed=”none” data-mrf-recirculation=”inline-link”>demonstrated a 300-millimeter–ready integration of critical process modules for 2D field-effect transistors (2DFETs), indicating that 2D materials and 2DFETs are moving closer…
