ChangXin Memory Technologies (CXMT), the leader of the Chinese DRAM industry, is on track to build 3rd Generation high bandwidth memory (HBM3), according to data-analytics-id=”inline-link” href=”https://biz.chosun.com/it-science/ict/2026/01/20/MIR3LREZY5HBBJFOUUCULBUFOA/?utm_source=naver&utm_medium=original&utm_campaign=biz” target=”_blank” data-url=”https://biz.chosun.com/it-science/ict/2026/01/20/MIR3LREZY5HBBJFOUUCULBUFOA/?utm_source=naver&utm_medium=original&utm_campaign=biz” referrerpolicy=”no-referrer-when-downgrade” data-hl-processed=”none” data-mrf-recirculation=”inline-link”>Chosun Biz. Moreover, China-based Naura Technology, Maxwell, and U-Preseason are developing domestic tools specifically designed to assemble HBM memory stacks. If true, this means that in several years, China will have fully localized the production of HBM, which is crucial in the race to produce high-end AI accelerators, with Chinese companies data-analytics-id=”inline-link” href=”https://www.tomshardware.com/tech-industry/semiconductors/china-tells-chipmakers-to-use-homegrown-chipmaking-tools-for-50-percent-of-new-capacity-decree-designed-to-squeeze-foreign-suppliers-out-of-supply-chain” data-mrf-recirculation=”inline-link”…
