Next-gen MRAM breakthrough can flip bits at SRAM-rivalling speeds with low power consumption — researchers claim true next-gen breakthrough using Tungsten layer

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A cross-institutional research team has published a paper where a breakthrough in (MRAM) development is detailed. According to a blog post published by Taiwan’s National Yang Ming Chiao Tung University (NYCU), which spearheaded the efforts, they have managed to overcome a major challenge that hampered the development and adoption of this kind of non-volatile memory. The researchers claim that their spin–orbit torque magnetic random-access memory (SOT-MRAM) is a true next-gen breakthrough as it…



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Next-gen MRAM breakthrough can flip bits at SRAM-rivalling speeds with low power consumption — researchers claim true next-gen breakthrough using Tungsten layer


A cross-institutional research team has published a paper where a breakthrough in (MRAM) development is detailed. According to a blog post published by Taiwan’s National Yang Ming Chiao Tung University (NYCU), which spearheaded the efforts, they have managed to overcome a major challenge that hampered the development and adoption of this kind of non-volatile memory. The researchers claim that their spin–orbit torque magnetic random-access memory (SOT-MRAM) is a true next-gen breakthrough as it…



Source link

Disclaimer

We strive to uphold the highest ethical standards in all of our reporting and coverage. We StartupNews.fyi want to be transparent with our readers about any potential conflicts of interest that may arise in our work. It’s possible that some of the investors we feature may have connections to other businesses, including competitors or companies we write about. However, we want to assure our readers that this will not have any impact on the integrity or impartiality of our reporting. We are committed to delivering accurate, unbiased news and information to our audience, and we will continue to uphold our ethics and principles in all of our work. Thank you for your trust and support.

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